A heterostructured SnO2-TiO2 thin film prepared by Langmuir-Blodgett technique

作者：Choudhury Sipra^*; Betty C A

来源：Materials Chemistry and Physics, 2013, 141(1): 440-444.

DOI：10.1016/j.matchemphys.2013.05.042

• Oxides
• Thin films
• Heterostructures
• Interfaces
• Atomic force microscopy (AFM)

SnO2-TiO2 heterostructure films were prepared through Langmuir-Blodgett (LB) route. LB films of octadecyl amine (ODA)-titanyl oxalate multilayer deposited on Si (100) and decomposed at 600 degrees C showed rutile and anatase phases of ultrathin TiO2 film. Subsequently, multilayer LB film of ODA stannate deposited on the pre deposited TiO2 film after decomposition at 600 degrees C resulted in thin SnO2 films on the TiO2 thin film. The phase analysis of the SnO2-TiO2 film showed cassiterite phase of SnO2 as well as the rutile/anatase mixture of TiO2 indicating a SnO2-TiO2 heterostructured film. Surface morphology of the pure TiO2 film and SnO2-TiO2 film were analyzed by using AFM. Electrical characterization by AC impedance analysis suggested SnO2-TiO2 heterostructure formation. DC current voltage measurement showed increase in photocurrent indicating visible light absorption and efficient charge separation under the sunlight type radiation.

• 出版日期2013-8-15