Analysis of the temperature dependence of the forward voltage characteristics of GaInN light-emitting diodes

作者：Meyaard David S; Cho Jaehee^*; Schubert E Fred; Han Sang Heon; Kim Min Ho; Sone Cheolsoo

来源：Applied Physics Letters, 2013, 103(12): 121103.

DOI：10.1063/1.4821538

The forward voltage characteristics of GaInN light-emitting diodes are studied in the temperature range of 80 K to 450 K. The forward-voltage-vs.-temperature curve has a %26quot;two-slope%26quot; characteristic with a slope of dV(f)/dT = -1.7 mV/K and -8.0 mV/K at room temperature and cryogenic temperatures, respectively. To investigate the two-slope characteristic, we perform transmission-line-model measurements on p-type GaN and show that both p-type contact and sheet resistance decrease drastically with increasing temperature. We conclude that dVf/dT in the high-slope region is limited by p-type sheet and contact resistance, and in the low-slope region by the GaN pn junction properties.

• 出版日期2013-9-16