Delayed Switching in Memristors and Memristive Systems

作者：Wang Frank Zhigang^*; Helian Na; Wu Sining; Lim Mian Guan; Guo Yike; Parker Michael Andrew

来源：IEEE Electron Device Letters, 2010, 31(7): 755-757.

DOI：10.1109/LED.2010.2049560

• Electronic device
• memristive system
• memristor
• random access memory
• resistively switching

It was found that the switching in a memristor takes place with a time delay (this peculiar feature is named "the delayed switching"). This feature has been verified by a circuit-based experiment. The physical interpretation of this phenomenon is that an electron element possesses certain inertia, i.e., charge q or flux phi is inertial with the tendency to remain unchanged (settle to some equilibrium state). It cannot respond as rapidly as the fast variation in the excitation waveform and always takes a finite but small time interval to change its resistance value, as it must take place in a memristor or memristive system. In addition, a potential application of using this feature in ultradense computer memory has been discussed.

• 出版日期2010-7