An Ultra-Low-Power MMIC Amplifier Using 50-nm delta-Doped In0.52Al0.48As/In0.53Ga0.47As Metamorphic HEMT

作者：Hwang Chi Jeon^*; Lok Lai Bun; Chong Harold M H; Holland Martin; Thayne Iain G; Elgaid Khaled

来源：IEEE Electron Device Letters, 2010, 31(11): 1230-1232.

DOI：10.1109/LED.2010.2070484

• Coplanar waveguide
• metamorphic high-electron-mobility transistor (MHEMT)
• monolithic microwave integrated circuit (MMIC)
• ultra-low power consumption
• delta-doped In0.52Al0.48As/In0.53Ga0.47As

An ultra-low-power monolithic amplifier using 50-nm gate-length GaAs metamorphic high-electron-mobility transistor (MHEMT) has been designed and fabricated by a coplanar waveguide monolithic microwave integrated circuit process. A double delta-doped In0.52Al0.48As/In0.53Ga0.47As MHEMT technology with optimal doping profiles was used to achieve both ultra-low dc power consumption and good dynamic-range performance. The single-stage amplifier operates in the 24-GHz band and shows typical gain of 7.2 dB, +/- 0.5 dB bandwidth of 1.2 GHz, return losses better than 9 dB, and input IP3 (IIP3) of +3 dBm while consuming only 0.9 mW of dc power. These experimental results demonstrate the outstanding potential of MHEMT technology for ultra-low-power applications such as wireless sensor networks.

• 出版日期2010-11