A New Cost-Effective Metal-Insulator-Metal Capacitor Processed at 350 degrees C Using Ni2Si Fully Silicided Amorphous Silicon Electrodes

作者：Lee Jung Hsiang^*; Lin Yi Chang; Chen Bo Han

来源：IEEE Transactions on Electron Devices, 2011, 58(3): 672-676.

DOI：10.1109/TED.2010.2103561

• Fully silicided (FUSI)
• metal-insulator-metal (MIM)
• Schottky emission
• TiO2

Without requiring noble metal materials, a novel low-cost Ni2Si/TiO2/Ni-2 Si metal-insulator-metal (MIM) capacitor processed at 350 degrees C has been developed using nickel fully silicided (Ni-FUSI) amorphous silicon electrodes. A high capacitance density of 17 fF/mu m(2) along with a low top-electrode resistivity of similar to 38 mu Omega . cm were achieved. At 25 degrees C, this MIM capacitor also displays a good leakage current density of 6.4 x 10(-6) A/cm(2) at -1 MV/cm (-2.5 V) and a quadratic voltage coefficient a of 4110 ppm/V-2. Schottky emission dominates the leakage current in low negative field (< 1 MV/cm), whereas Poole-Frenkel effect appears in high negative field (> 1.4 MV/cm). The Schottky barrier height Phi(B) at the Ni2Si/TiO2 interface was first extracted to be 0.8 eV, whereas the trap barrier height Phi(t) in the TiO2 film was 0.39 eV. Material characterization further reveals that this structure is highly appropriate for future ultralarge-scale-integration technologies.

• 出版日期2011-3