摘要
A systematic design approach to achieve micropower class AB CMOS transconductors is presented. It includes techniques to get rail-to-rail operation and continuous transconductance tuning, based on floating and Quasi-Floating Gate transistors. Application of the proposed design approach leads to a new family of high-performance power-efficient class AB CMOS transconductors. To illustrate the feasibility of this approach, 12 transconductors derived from this common framework have been designed and fabricated in a 0.5 mu m CMOS technology. Measurement results show THD values for 2 V inputs of -56 dB for a static power of 300 mu W and silicon area %26lt;0.07 mm(2).
- 出版日期2013-10