科研之友
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摘要
The effects of sulfur incorporation on the stability of dielectric/germanium structures submitted to annealing in oxygen were investigated. For that, hafnium oxide films were deposited on germanium, which was passivated or not with sulfur. Physico-chemical characterization of the resulting structures evidenced an improved oxidation resistance of sulfur passivated samples: oxygen isotopic tracing in conjunction with nuclear reaction profiling showed that sulfur hampers oxygen incorporation during post deposition annealing. This effect was related to the reduced amount of germanium oxides prior to the dielectric deposition. Sulfur may also act as a diffusion barrier for oxidizing species.
- 出版日期2013
