A linear 180 nm SOI CMOS antenna switch module using integrated passive device filters for cellular applications

作者：Cui Jie; Chen Lei; Zhao Peng; Niu Xu; Liu Yi; Micro nano Device Research Center Shanghai Advanced Research Institute Chinese Academy of Sciences; Graduate University of the Chinese Academy of Sciences; Shanghai Raiser Electronics

来源：Chinese Journal of Semiconductors, 2014, 35(06): 118-122.

DOI：10.1088/1674-4926/35/6/065005

A broadband monolithic linear single pole, eight throw(SP8T) switch has been fabricated in 180 nm thin film silicon-on-insulator(SOI) CMOS technology with a quad-band GSM harmonic filter in integrated passive devices(IPD) technology, which is developed for cellular applications. The antenna switch module(ASM) features1.2 dB insertion loss with filter on 2G bands and 0.4 dB insertion loss in 3G bands, less than –45 dB isolation and maximum –103 dB intermodulation distortion for mobile front ends by applying distributed architecture and adaptive supply voltage generator.

• 出版日期2014-6-15
• 单位中国科学院大学