Size-Limiting Effect of Site-Controlled InAs Quantum Dots Grown at High Temperatures by Molecular Beam Epitaxy

作者：Cha Kyu Man^*; Horiuchi Isao; Shibata Kenji; Hirakawa Kazuhiko

来源：Applied Physics Express, 2012, 5(8): 085501.

DOI：10.1143/APEX.5.085501

We have investigated the site-controlled growth of InAs quantum dots (QDs) by using atomic-force-microscope (AFM)-assisted anodic oxidation. It is found that the morphology of the site-controlled QDs strongly depends on the growth temperature, T-g; when QDs are grown at T-g <= 480 degrees C, the obtained QDs are much larger than the nanoholes prepared by AFM oxidation. In contrast, when QDs are grown at T-g = 520 degrees C, the diameter of the QDs is limited by that of nanoholes and is almost unchanged with varying InAs supply. The single-layer QD array grown at 520 degrees C showed good optical properties and uniformities.

• 出版日期2012-8