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摘要
Highly-dispersed boron-doped graphene nanoribbons (B-GNRs), prepared by a simple vacuum activation method, exhibit p-type semiconductor properties and provide many more zigzag- and armchair-edges to facilitate control of the bandgap. B-GNRs are used for the photodegradation of Rhodamine B in order to demonstrate their excellent conductivity and photocatalytic activity.
- 出版日期2014
- 单位华东理工大学
