Lanthanum-Oxide-Doped Nitride Charge-Trap Layer for a TANOS Memory Device

作者：Park Jong Kyung^*; Park Youngmin; Lee Seok Hee; Iim Sung Kyu; Oh Jae Sub; Joo Moon Sig; Hong Kwon; Cho Byung Jin

来源：IEEE Transactions on Electron Devices, 2011, 58(10): 3314-3320.

DOI：10.1109/TED.2011.2161993

• Charge-trap Flash memory
• lanthanum oxide
• nitride
• retention
• TaN/Al(2)O(3)/Si(3)N(4)/SiO(2)/Si ( TANOS)
• trapping energy level

A charge-trap-type Flash memory with a La(2)O(3)-doped Si(3)N(4) charge-trapping layer is demonstrated for the first time. An ultrathin La(2)O(3) layer is inserted in the middle of a Si(3)N(4) layer, followed by high-temperature annealing to mix the two layers. The La(2)O(3)-doped Si(3)N(4) layer, irrespective of Si(3)N(4) deposition processes, is found to provide deep charge-trapping sites, resulting in an excellent pre-/postcycling retention property and high reliability. The optimization of the La(2)O(3) layer thickness and position in the Si(3)N(4) trapping layer has been also systematically studied.

• 出版日期2011-10