Diode-pumped passively Q-switched Nd : GGG crystal with GaAs saturable absorber

作者:Qin L J*; Tang D Y; Xie G Q; Luo H; Dong C M; Jia Z T; Tao X T
来源:Laser Physics, 2008, 18(6): 719-721.
DOI:10.1134/S1054660X08060030

摘要

We have experimentally studied the passive Q-switching performance of a diode-pumped Nd-doped gadolinium gallium garnet (Nd:GGG) laser with a GaAs saturable absorber. Stable Q-switched pulses as short as 9 ns with a repetition rate of 196.1 kHz have been obtained with an appropriately coated GaAs wafer used as the output coupler. At 12.44 W of the absorbed pump power, an average output power of 1.03 W has been obtained and the corresponding pulse energy and peak power are 5.25 mu J and 0.58 kW, respectively.