Development of large area nano imprint technology by step and repeat process and pattern stitching technique

作者：Cho Youngtae; Kwon Sin; Seo Jung Woo; Kim Jeong Gil; Cho Jung Woo; Park Jung Woo; Kim Hyuk; Lee Sukwon^*

来源：Microelectronic Engineering, 2009, 86(12): 2417-2422.

DOI：10.1016/j.mee.2009.05.004

• Nano imprint lithography
• Step and repeat process
• Pattern stitching

In order to apply cost effective and productive nano imprint technology to the TFT-LCD fabrication, problems owing to large patterning area have to be solved. In this works, large area UV nano imprint process was developed by using of collimated UV light and shadow masks. It was shown that complex patterns could be easily replicated on 300 mm x 400 mm substrate by a large mold which is fabricated by suggested step and repeat process. Because roll pressing and alignment technique are important steps in our process for large area nano imprint, these process steps were optimized. Also, as a key technology for enlargement of patterning area, the stitching technique was developed. The idea using a collimated UV light is used for pattern stitching in nano imprint process. Developed large area pattern fabrication technique could be applied to various applications such as TFT-LCD process or optical film fabrication extensively.

• 出版日期2009-12