科研之友
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摘要
Based on the semiconductor-device structure and equations, we analyze the operation principles of thin-film gated silicon-on insulator (SOI) Lateral PIN (LPIN) photodetectors, and obtain current-voltage models. With 800 nm film thickness and 8 mu m channel length, we validate these models by two-dimensional (2D) Atlas numerical measurements and electrical simulations, including carriers distributions and current-voltage characteristics. In fully-depleted condition, our results predict the internal quantum efficiency as high as 97% at 400 nm wavelength, a very low dark current around 1 pA and a high ratio of more than 10(7) between illuminated to dark current with low-voltage operation. Optimizing the performances of photodetectors, our models have highly potential applications in optical storage systems.
- 出版日期2014
- 单位湖南大学
