A High-Temperature Die-Bonding Structure Fabricated at Low Temperature for Light-Emitting Diodes

作者：Cheng Li Chin; Chen Chih Ming^*; Chen Ming Guan; Hu Chi Chang; Jiang Hsin Yi; Horng Ray Hua; Wuu Dong Sing

来源：IEEE Electron Device Letters, 2015, 36(8): 835-837.

DOI：10.1109/LED.2015.2451018

• Diffusion
• die-bonding
• thermal management

A trilayer of Sn/Bi/Sn was deposited on a heat sink substrate as the die-bonding material for a light-emitting diode. The eutectic feature of the Sn/Bi system allowed the die-bonding to be carried out at a low temperature using a facile thermo-compression process. Two thin Sn layers were sacrificed to form two intermetallic compounds sandwiching the Bi layer, and this high-temperature die-bonding structure showed superior thermal management performance under harsh operation environments (high temperature/current) based on thermal infrared, thermal resistance, and derating analyses.

• 出版日期2015-8
• 单位清华大学