Comparison and distribution of minimum operation voltage in fully depleted silicon-on-thin-buried-oxide and bulk static random access memory cells

作者：Mizutani Tomoko^*; Yamamoto Yoshiki; Makiyama Hideki; Shinohara Hirofumi; Iwamatsu Toshiaki; Oda Hidekazu; Sugii Nobuyuki; Hiramoto Toshiro

来源：Japanese Journal of Applied Physics, 2014, 53(4): 04EC18.

DOI：10.7567/JJAP.53.04EC18

The minimum operation voltage (V-min) of intrinsic channel fully depleted (FD) silicon-on-thin-buried-oxide (SOTB) static random access memory (SRAM) cells are measured and compared with those of conventional bulk SRAM cells in order to directly compare the worst cells. It is confirmed that the worst V-min of 1 kbit SOTB SRAM cells is half that of 1 kbit bulk cells. The distribution of V-min of 48 kbit SOTB and bulk SRAM cells are also measured and compared. The results show a great advantage of SOTB SRAM cells for lower power and lower voltage operation upon introducing SOTB, because of reduced V-TH variability.

• 出版日期2014-4