Activation of p-type Conduction in ZnO:N Films by Annealing in Atomic Oxygen

作者：Rogozin I V^*; Georgobiani A N; Kotlyarevsky M B; Demin V I; Lepnev L S

来源：Inorganic Materials, 2013, 49(6): 568-571.

DOI：10.1134/S0020168513050130

ZnO:N epitaxial films have been grown by reactive magnetron sputtering. The effect of annealing in atomic oxygen on the structural and electrical properties of the ZnO:N films has been studied by X-ray diffraction, atomic force microscopy, Hall effect measurements, and X-ray photoelectron spectroscopy. By annealing at temperatures from 500 to 700 degrees C, we have obtained p-type ZnO:N films with a resistivity of similar to 57 Omega cm, hole mobility of similar to 2.7 cm(2)/(V s), and hole concentration of similar to 6.8 x 10(17) cm(-3). X-ray photoelectron spectroscopy results suggest that the p-type conductivity of the films is due to a decrease in the concentration of (N-2)(O) and V-O donors.

• 出版日期2013-6