Anomalous degradation behaviors under illuminated gate bias stress in a-Si:H thin film transistor

作者：Tsai, Ming Yen; Chang, Ting Chang^*; Chu, Ann Kuo; Hsieh, Tien Yu; Lin, Kun Yao; Wu, Yi Chun; Huang, Shih Feng; Chiang, Cheng Lung; Chen, Po Lin; Lai, Tzu Chieh; Lo, Chang Cheng; Lien, Alan

来源：Thin Solid Films, 2014, 572: 79-84.

DOI：10.1016/j.tsf.2014.09.050

• Amorphous-silicon thin-film
• transistors (a-Si:H TFTs)
• Bias stress
• Threshold voltage
• Interface state creation

This study investigates the impact of gate bias stress with and without light illumination in a-Si:H thin film transistors. It has been observed that the I-V curve shifts toward the positive direction after negative and positive gate bias stress due to interface state creation at the gate dielectric. However, this study found that threshold voltages shift negatively and that the transconductance curve maxima are anomalously degraded under illuminated positive gate bias stress. In addition, threshold voltages shift positively under illuminated negative gate bias stress. These degradation behaviors can be ascribed to charge trapping in the passivation layer dominating degradation instability and are verified by a double gate a-Si:H device.

• 出版日期2014-12-1
• 单位中山大学