Extraction of Subgap Donor States in a-IGZO TFTs by Generation-Recombination Current Spectroscopy

作者：Bae Minkyung^*; Kim Yongsik; Kim Sungchul; Kim Dong Myong; Kim Dae Hwan

来源：IEEE Electron Device Letters, 2011, 32(9): 1248-1250.

DOI：10.1109/LED.2011.2160835

• Amorphous InGaZnO (a-IGZO)
• generation-recombination (G-R) current
• subgap donorlike density of states (DOS)
• thin-film transistor (TFT)

A physics-based generation-recombination current (I(G-R)) spectroscopy is proposed for the extraction of the subgap donorlike density of states (DOS) of amorphous InGaZnO thin-film transistors. Physics-based Shockley-Read-Hall recombination through the subgap DOS over the bandgap is fully considered, and the potential for the carrier concentration is calculated through the DeAOTS model. The extracted parameters for the exponential deep donorlike states are N(DD) = 5.5 x 10(21) [cm(-3) . eV(-1)] and kT(DD) = 0.115 [eV].

• 出版日期2011-9