Bottom-gate poly-Si thin-film transistors by nickel silicide seed-induced lateral crystallization with self-aligned lightly doped layer

作者：Lee Sol Kyu; Seok Ki Hwan; Chae Hee Jae; Lee Yong Hee; Han Ji Su; Jo Hyeon Ah; Joo Seung Ki^*

来源：Solid-State Electronics, 2017, 129: 6-9.

DOI：10.1016/j.sse.2016.11.019

• Bottom-gate
• Polycrystalline silicon (poly-Si)
• Thin-film transistor (TFT)
• Self-aligned
• Hot-carrier
• Kink-effect

We report a novel method to reduce source and drain (S/D) resistances, and to form a lightly doped layer (LDL) of bottom-gate polycrystalline silicon (poly-Si) thin-film transistors (TFTs). For application in driving TFTs, which operate under high drain voltage condition, poly-Si TFTs are needed in order to attain reliability against hot-carriers as well as high field-effect mobility (mu(FE)). With an additional doping on the p(+) Si layer, sheet resistance on S/D was reduced by 37.5% and an LDL was introduced between the channel and drain. These results contributed to not only a lower leakage current and gate-induced drain leakage, but also high immunity of kink-effect and hot-carrier stress. Furthermore, the measured electrical characteristics exhibited a steep subthreshold slope of 190 mV/dec and high mu(FE) of 263 cm(2)/Vs.

• 出版日期2017-3