A pressure sensor with electrostatic self-detecting structure

作者：Nie, Meng^*; Yang, Hengshan; Xia, Yunhan

来源：Cluster Computing, 2019, 22(S4): S7815-S7820.

DOI：10.1007/s10586-017-1441-z

• Pressure sensor
• Piezoresistive
• Self-detecting
• Electrostatic force
• Flip-chip

A piezoresistive pressure sensor with the electrostatic self-detecting structure was developed in the paper, which can solve the issue of low efficiency and time-consuming drawbacks of the traditional method in testing and calibrating the sensor with the specialized equipment. The theoretical model of the composite membrane piezoresistive sensor was established, the analytical model of the electrostatic force driven by an electrostatic voltage was obtained, a feasible fabrication process based on flip-chip process was proposed based on the MEMS processing, the pressure sensor and its detection structure were manufactured to verify the validity of the model in the paper. From the experiment results, it can be verified that the sensitivity of the pressure sensor was 1.77 mV/hPa and the non-linearity was 1.19% respectively. At the same time, the electrostatic force used to test sensor calibration could replace the loaded pressure in the range between 110 and 500 hPa.

• 出版日期2019-7
• 单位东南大学