A novel current reference based on subthreshold MOSFETs with high PSRR

作者：Yu Guoyi^*; Zou Xuecheng

来源：Microelectronics Journal, 2008, 39(12): 1874-1879.

DOI：10.1016/j.mejo.2007.09.015

• Current reference
• Voltage regulator
• Low voltage
• Subthreshold
• CMOS integrated circuit

A novel current reference based on subthreshold MOSFETs with high power supply rejection ratio (PSRR) is presented. The proposed circuit takes full advantages of the I-V transconductance characteristics of MOSFET operating in the subthreshold region and the enhancement pre-regulator with the high gain negative feedback loop for the current reference core circuit. The proposed circuit, designed with the SMIC 0.18 mu m standard CMOS logic process technology, exhibits a stable current of about 1.701 mu A with much low temperature coefficient of 2.5 x 10(-4) mu A/degrees C in the temperature range of -40 to 150 degrees C at 1.5 V supply voltage, and also achieves a best PSRR over a broad frequency. The PSRR is about -126 dB at dc frequency and remains -92 dB at the frequency higher 1 MHz. The proposed circuit operates stably at the supply voltage higher 1.2V and has good process compatibility.

• 出版日期2008-12
• 单位华中科技大学