X-ray photoelectron spectroscopy study of Schottky junctions based on oxygen-/fluorine-terminated (100) diamond

作者:Li, Fengnan; Zhang, Jingwen; Wang, Xiaoliang; Liu, Zhangcheng; Wang, Wei; Li, Shuoye; Wang, Hong-Xing*
来源:Diamond and Related Materials, 2016, 63: 180-185.
DOI:10.1016/j.diamond.2015.12.007

摘要

In this study, investigation of Schottky junctions based on oxygen-/fluorine-terminated (100) diamond (O-/F-diamond) film has been carried out. Both of the O-/F-diamond surfaces have been formed on different areas of one (100) diamond sample by O-2 and CF4 plasma. Metals of Au, Pd, and Cu have been evaporated on the diamond surfaces to form Schottky junctions, whose barrier heights on O-/F-diamond have been investigated by X-ray photoelectron spectroscopy technique, the results of which indicate that the barrier heights of the metals on O-diamond are about 1.70 eV, and those on F-diamond are about 230 eV, respectively.