Microwave Induced In-Situ Active Ion Etching of Growing InP Nanocrystals

作者:Lovingood Derek D; Strouse Geoffrey F*
来源:Nano Letters, 2008, 8(10): 3394-3397.
DOI:10.1021/nl802075j

摘要

High quantum yield (47%) InP nanocrystals can be prepared without the need for post HF treatment by combining microwave methodologies with the presence of a fluorinated ionic liquid. Growing the InP nanocrystals in the presence of the ionic liquid 1-hexyl-3-methyl-imidazolium tetrafluoroborate (hmim BF4) allows in situ etching to be achieved. The optimization of the PL QY is achieved by balancing growth and etching rates in the reaction.

  • 出版日期2008-10