A Millimeter-Wave (23-32 GHz) Wideband BiCMOS Low-Noise Amplifier

作者：El Nozahi Mohamed^*; Sanchez Sinencio Edgar; Entesari Kamran

来源：IEEE Journal of Solid-State Circuits, 2010, 45(2): 289-299.

DOI：10.1109/JSSC.2009.2038126

• BiCMOS
• coupled-resonators
• low-noise amplifier
• millimeter-wave
• wideband

This paper presents a 23-32 GHz wideband BiCMOS low-noise amplifier (LNA). The LNA utilizes coupled-resonators to provide a wideband load. To our knowledge, the proposed LNA achieves the widest bandwidth with minimum power consumption using 0.18 mu m BiCMOS technology in K-band. Analytical expressions for the wideband input matching, gain, noise figure and linearity are presented. The LNA is implemented using 0.18 mu m BiCMOS technology and occupies an area of 0.25 mm(2). It achieves a voltage gain of 12 dB, 3-dB bandwidth of 9 GHz, noise figure between 4.5-6.3 dB, linearity higher than -6.4 dBm with a power consumption of 13 mW from a 1.5 V supply.

• 出版日期2010-2