摘要

Molecular dynamics simulations using a Buckingham potential have been used to investigate the process of wurtzite GaN films growth, including the appearance of films in early stage, regulation of growth, structure of the surface and the dynamics features. The simulations showed that N atoms and Ga atoms were absorbed on the lattice of substrate and took on a distinct samdwich structure; the crystalline character of the films became weaker from bottom to top. Time evolution of the number of the atoms deposited on every layer, the vacancy ratio of every layer, the height of the centre of mass of the deposited clusters and the mean square displacements of the atoms were observed, the results showed that the clusters became stable with the time steps increasing and the first three layers had reached the stable state in the first 5000 steps, besides, N atoms reached the equilibrium positions more quickly than Ga atoms.

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