A Comparison Between Single-Phase Quasi-Z-Source and Quasi-Switched Boost Inverters

作者：Minh Khai Nguyen^*; Lim Young Cheol; Park Sung Jun

来源：IEEE Transactions on Industrial Electronics, 2015, 62(10): 6336-6344.

DOI：10.1109/TIE.2015.2424201

• Boost inversion ability
• quasi-switched boost inverter (qSBI)
• quasi-Z-source inverter (qZSI)
• shoot-through state

The properties of a single-phase quasi-Z-source inverter (qZSI) and a single-phase quasi-switched boost inverter (qSBI), both of which are single-stage buck-boost inverters, are investigated and compared. For the same operating conditions, qSBI has the following advantages over qZSI: 1) Three capacitors are saved; 2) the current rating on both of its switches and diodes is lower; 3) its boost factor is higher with an equivalent parasitic effect; and 4) its efficiency is higher. However, qSBI has one more active switch and one more diode than Z-source/qZSIs. In additi on, the capacitor voltage stress of qSBI is higher than that of qZSI. The dc and ac component circuit analysis, impedance design with low-frequency and high-frequency ripples, component stresses, and power loss calculation are presented. A prototype based on a TMS320F28335 DSP is built in order to compare the operating principle of qSBI and qZSI.

• 出版日期2015-10