Deposition of fluorine doped indium oxide by atmospheric pressure chemical vapour deposition

作者：Sheel David W; Gaskell Jeffrey M^*

来源：Thin Solid Films, 2011, 520(4): 1242-1245.

DOI：10.1016/j.tsf.2011.04.206

• Fluorine doped indium oxide
• APCVD
• Transparent conductive oxide
• Photovoltaics

We report the deposition of fluorine doped indium oxide by atmospheric pressure chemical vapour deposition (APCVD) using a previously unreported precursor combination; dimethylindium acetylacetonate, [Me2In(acac)] and trifluoroacetic acid (TFA). This process is potentially scalable for high throughput, large area production.
[Me2In(acac)] is a volatile solid. It is more stable and easier to handle than traditional indium oxide precursors such as pyrophoric trialkylindium compounds.
Cubic fluorine doped indium oxide (F.In2O3) was deposited at a substrate temperature of 550 degrees C with growth rates exceeding 8 nm/s. Resistivity was 8x10(-4) Omega cm and transmission for a 200 nm film was >80% with less than 1% haze.

• 出版日期2011-12-1