Analysis of anomalous traps measured by charge pumping technique in HfO2/metal gate n-channel metal-oxide-semiconductor field-effect transistors

作者：Ho Szu Han^*; Chang Ting Chang; Lu Ying shin; Lo Wen Hung; Chen Ching En; Tsai Jyun Yu; Chen Hua Mao; Wu Chi Wei; Luo Hung Ping; Liu Guan Ru; Tseng Tseung Yuen; Cheng O**ert; Huang Cheng Tung; Sze Simon M

来源：Applied Physics Letters, 2012, 101(23): 233509.

DOI：10.1063/1.4769444

This letter investigates anomalous traps measured by charge pumping technique in high voltage in HfO2/metal gate n-channel metal-oxide-semiconductor field-effect transistors. N-V-high level characteristic curves with different duty ratios indicate that the electron discharge time dominates the value of N for extra traps. By fitting ln (N (t(base level) = 2.5 mu s)-N (t(base level)))-Delta t(base level) at different temperatures and computing the equation t = tau(0) exp (alpha(e,SiO2)d(SiO2) + alpha(e,HfO2)d(HfO2,trap)), results show that these extra traps measured by the charge pumping technique at high voltage can be attributed to high-k bulk shallow traps.

• 出版日期2012-12-3
• 单位中山大学