A new system for synthesis of high quality nonpolar GaN thin films

作者：Li, Guoqiang^*; Shih, Shao-Ju; Fu, Zhengyi

来源：Chemical Communications, 2010, 46(8): 1206-1208.

DOI：10.1039/b919722b

• PULSED-LASER DEPOSITION
• GROWTH
• SEMICONDUCTORS
• SINGLE
• BLUE

High quality nonpolar m-plane GaN films were successfully grown on LiGaO2 (100) substrates for the first time. This m-plane GaN/LiGaO2 (100) system opens a new approach for realizing highly-efficient nitride devices.

• 出版日期2010
• 单位武汉理工大学