Anomalous Hall Effect in Gd-Implanted Wurtzite Al(x)Ga(1)-(x)N/GaN High Electron Mobility Transistor Structures

作者：Lo Fang Yuh^*; Melnikov Alexander; Reuter Dirk; Cordier Yvon; Wieck Andreas D

来源：Symposium on Rare-Earth Doping of Advanced Materials for Photonic Applications held at the 2008 MRS Fall Meeting, 2008-12-01 to 2008-12-04.

Al(x)Ga(1-x)N/GaN high electron mobility transistor (HEMT) structures grown by ammonia-source molecular beam epitaxy (MBE) are focused-ion-beam implanted with 300 keV Gd-ions at room temperature. The two-dimensional electron gas (2DEG) of these HEMT structures is located 27 nm underneath the sample surface. At 4.2 K, current-voltage characteristics across implanted rectangles show that the structures remain conducting up to a Gd-dose of 1x10(12) cm(-2). Anomalous Hall effect (AHE) is observed at T = 4.2 K for structures implanted with Gd, whose dose is 3x10(11) cm(-2). Measurements of AHE in the wide temperature range from 2.4 K to 300 K show that the magnetic ordering temperature of these structures is around 100 K. Therefore, these Gd-implanted HEMT structures containing the still conducting 2DEG, which is now embedded in a ferromagnetic semiconductor, open the possibility to polarize the electron spins.

• 出版日期2009
• 单位东华大学