摘要

We report a comprehensive study of the energy response to low-energy recoils in dual-phase xenon-based dark matter experiments. A recombination model is developed to explain the recombination probability as a function of recoil energy at zero field and non-zero field. The role of e-ion recombination is discussed for both parent recombination and volume recombination. We find that the volume recombination under a non-zero field is constrained by a plasma effect, which is caused by a high density of charge carriers along the ionization track forming a plasma-like cloud of charge that shields the interior from the influence of the external electric field. Subsequently, the plasma time that determines the volume recombination probability at non-zero field is demonstrated to be different between electronic recoils (ERs) and nuclear recoils (NRs) due to the difference of ionization density between two processes. We show a weak field dependence of the plasma time for NRs and a stronger field dependence of the plasma time for ERs. As a result, the time-dependent recombination is implemented in the determination of charge and light yield with a generic model. Our model agrees well with the available experimental data from xenon-based dark matter experiments.