A novel technique exploiting C-V, G-V and I-V simulations to investigate defect distribution and native oxide in high-kappa dielectrics for III-V MOSFETs

作者：Sereni G^*; Larcher L; Vandelli L; Veksler D; Kim T; Koh D; Bersuker G

来源：Microelectronic Engineering, 2015, 147: 281-284.

DOI：10.1016/j.mee.2015.04.111

• High-kappa
• III-V
• Capacitance
• Conductance
• Defects
• Current simulations

In this paper we present a novel defect spectroscopy technique to investigate the properties of high-kappa metal-gate oxides. This technique, based on the simultaneous simulations of I-V, C-V and G-V curves at different frequencies, allows profiling the distribution of interfacial and bulk defects inside the gate oxide and investigating the composition of the high-kappa stacks on III-V materials. The proposed technique is applied to investigate the properties of high-kappa stacks of InGaAs MOSFETs.

• 出版日期2015-11-1