A Nanostructure Phosphor: Effect of Process Parameters on the Photoluminescence Properties for Near-UV WLED Applications

作者：Sameie H; Salimi R; Alvani A A Sabbagh^*; Sarabi A A; Moztarzadeh F; Farsi M A Mokhtari; Mohammadloo H Eivaz; Alvani M Sabbagh; Tahriri M

来源：Journal of Inorganic and Organometallic Polymers and Materials, 2012, 22(4): 737-743.

DOI：10.1007/s10904-011-9627-y

• Nanostructures
• Sol-gel
• Photoluminescence
• Rare-earths

The sol-gel preparative method was employed to synthesize SrZn2Si2O7:Eu nanostructure phosphors for white-light emitting diodes. The effects of calcination temperature and atmosphere as two important process parameters on the structural, morphological and optical properties were investigated using comprehensive characterization methods such as X-ray diffraction, scanning and transmission electron microscopy (SEM and TEM) and photoluminescence spectra. The obtained phosphors are efficiently excited from 340 to 400 nm, which matches the near UV emitting InGaN chip and emits strong band peaking at 481 nm due to 4f (6) 5d (1) ( (2) D) -%26gt; 4f (7) ( (8) S (7/2) ) transition of Eu2+ ions. In this europium-doped host lattice, a partial reduction of Eu3+ to Eu2+ at high temperature during the synthesis in air according to the charge compensation model is perceived. Furthermore, for this sample forbidden f-f transitions of Eu3+ are observed. Finally, using Scherrer%26apos;s equation the crystallite size of the optimum products with color coordination of x = 0.176, y = 0.193 is estimated at similar to 30 nm, which was consistent with TEM observations.

• 出版日期2012-7