Anomalous Hall effect and electron transport in ferromagnetic MnBi films

作者:Kharel P*; Sellmyer D J
来源:Journal of Physics: Condensed Matter , 2011, 23(42): 426001.
DOI:10.1088/0953-8984/23/42/426001

摘要

The electron transport properties of highly c-axis oriented MnBi thin films of various thicknesses have been investigated. Samples are metallic but the low temperature resistivity shows an unusual T-3 dependence. Transverse Hall effect measurements show that both the ordinary and anomalous Hall coefficients decrease with decreasing temperature below 300 K, but the ordinary Hall coefficient (R-0) undergoes a sign reversal around 105 K, where the magnetic anisotropy also changes sign. Analysis of the Hall data for various samples shows that the anomalous Hall coefficient (R-s) exhibits a strong rho(2) dependence, where rho is the longitudinal resistivity.