Modeling and Simulation Methodology for SOA-Aware Circuit Design in DC and Pulsed-Mode Operation of HV MOSFETs

作者：Khandelwal Sourabh^*; Sharma Surya; Chauhan Yogesh Singh; Gneiting Thomas; Fjeldly Tor A

来源：IEEE Transactions on Electron Devices, 2013, 60(2): 714-718.

DOI：10.1109/TED.2012.2218112

• High-voltage MOSFETs (HV MOSFETs)
• pulsed mode
• safe operating area (SOA)

In this paper, we present a modeling and simulation methodology for safe-operating-area (SOA)-aware circuit design in dc and pulsed-mode operation of high-voltage MOSFETs (HV MOSFETs). The developed methodology gives an accurate description of the SOA of devices under dc and, more importantly, transient inputs, taking into account the width and duty-cycle of the pulse. To the best of the authors%26apos; knowledge, this is the first time such a methodology integrated with circuit design tools is presented. It is shown through simulation of standard circuits of HV MOSFETs that the proposed methodology avoids overdesigns and enables circuit designers to use the high-voltage technology to its full potential.

• 出版日期2013-2