A comparative 1/f noise study of GeOI wafers obtained by the Ge enrichment technique and the Smart Cut technology

作者：Valenza M^*; El Husseini J; Gyani J; Martinez F; Bawedin M; Le Royer C; Augendre E; Damlencourt J F

来源：Microelectronic Engineering, 2011, 88(7): 1298-1300.

DOI：10.1016/j.mee.2011.03.090

• PMOS
• GeOI
• SiGe
• 1/f Noise
• Trap interface density

This paper presents an experimental investigation of Low-frequency Noise (LFN) measurements on Germanium-On-Insulator (GeOI) PMOS transistors processed on different wafers. The wafers are obtained by Ge enrichment technique and by Smart Cut (TM), technology. The slow oxide trap densities of back interface are used as a figure of merit to evaluate the process. The Smart Cut (TM) process is evaluated by studying GeOI pMOSFETs, and the enrichment process by studying Si(1-x)Ge(x) (x = 25% and 35%) pMOSFETs. The buried oxide is used as a back gate for experimental purposes. The extracted values are of the same order of magnitude for both processes and are close to those of state of art buried oxide SiO(2)/Si interfaces, demonstrating that both the Smart Cut (TM) and enrichment techniques produce equally good quality interfaces.

• 出版日期2011-7
• 单位中国地震局