Wavelength tuning of InAs/InAIGaAs quantum-dash-in-well laser using postgrowth intermixing

作者：Djie H S^*; Wang Y; Ooi B S; Wang D N; Hwang J C M; Fang X M; Wu Y; Fastenau J M; Liu W K; Dang G T; Chang W H

来源：Electronics Letters, 2007, 43(1): 33-35.

DOI：10.1049/el:20072837

The first demonstration is reported of a bandgap tuned laser using InAs/InAlGaAs quantum-dash-in-well structures on an InP Substrate, which utilises impurity-free induced intermixing. The intermixed laser exhibits comparable light-current characteristics after the bandgap is postgrowth-tuned by 100 rm.

• 出版日期2007-1-4