Analysis of indium incorporation in non-and semipolar GaInN QW structures: comparing x-ray diffraction and optical properties

作者：Joenen H^*; Bremers H; Rossow U; Langer T; Kruse A; Hoffmann L; Thalmair J; Zweck J; Schwaiger S; Scholz F; Hangleiter A

来源：Semiconductor Science and Technology, 2012, 27(2): 024013.

DOI：10.1088/0268-1242/27/2/024013

We have studied the growth of GaInN/GaN quantum wells on various polar, nonpolar and semipolar planes. From a detailed x-ray diffraction analysis, we derive the strain state and the composition of the quantum wells. The optical emission energy is obtained from photoluminescence spectra and modelled taking into account the deformation potentials and the Stark shifts. Both x-ray and optical data consistently show that indium incorporation is identical on the polar, nonpolar and semipolar planes within the experimental uncertainty.

• 出版日期2012-2