Area-Efficient Fast-Speed Lateral IGBT With a 3-D n-Region-Controlled Anode

作者：Chen, Wensuo^*; Zhang, Bo; Li, Zhaoji

来源：IEEE Electron Device Letters, 2010, 31(5): 467-469.

DOI：10.1109/LED.2010.2043638

• Forward drop
• negative differential resistance (NDR)
• segment-anode-n-p-n-LIGBT (SA-NPN-LIGBT)
• shorted-anode lateral insulated-gate bipolar transistor (SA-LIGBT)
• turn-OFF time
• 3-D n-region-controlled anode

A novel lateral insulated-gate bipolar transistor (LIGBT) structure on an silicon-on-insulator (SOI) substrate is proposed and discussed. The 3-D n-region-controlled anode concept makes this new structure effectively suppress the negative-differential-resistance (NDR) regime in conducting state, and what is more, during turn-OFF state, there are two effective paths for electron extraction, and the switching speed is very fast. As simulation results show, without sacrificing the high current-handling capability, the ratios of turn-OFF times for the proposed structure compared to that of the segment-anode-n-p-n-LIGBT presented earlier and the conventional LIGBT are 1 : 1.57 and 1 : 35.58, respectively. Due to the 3-D anode structure, the proposed device has efficient area usage and can be fabricated by the conventional SOI high-voltage IC process, so it is a promising device used in power ICs.

• 出版日期2010-5
• 单位电子科技大学