Study of the radiation damage of Silicon Photo-Multipliers at the GELINA facility

作者：Andreotti M; Baldini W; Calabrese R; Cibinetto G; Ramusino A Cotta; De Donato C; Faccini R; Fiorini M; Luppi E; Malaguti R; Montanari A; Pietropaolo A; Santoro V; Tellarini G^*; Tomassetti L; Tosi N

来源：Journal of Instrumentation, 2014, 9(04): P04004.

DOI：10.1088/1748-0221/9/04/P04004

• Radiation damage to detector materials (solid state)
• Photon detectors for UV, visible and IR photons (solid-state) (PIN diodes, APDs, Si-PMTs, G-APDs, CCDs, EBCCDs, EMCCDs etc)

In this paper we present a study of the neutrons-induced damage in Silicon PhotoMultipliers. Twenty-six devices, produced by AdvanSiD, Hamamatsu and SensL, have been irradiated at the Geel Electron LINear Accelerator (GELINA) in Belgium with a nearly white neutron beam. The total 1MeV equivalent integrated dose was 6.2x10(9) n(eq)/cm(2). Photodetector performances have been measured during the whole irradiation period and a gradual worsening of the detector properties, such as dark current and charge spectra, has been observed. %26lt;br%26gt;An extensive comparison of the performances of all the tested devices will be presented.

• 出版日期2014-4