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摘要
Platinum-silicided p-type Schottky barrier metal-oxide-semiconductor field-effect-transistors with sizes varying from 350 to 30 nm were fabricated on silicon-on-insulator substrates. Threshold voltage, subthreshold swing, drain-induced barrier lowering, and saturation current were investigated as a function of gate length and channel width. The device with a gate length of 30 nm showed excellent short channel characteristics with an on/off current ratio larger than 10(7), an off-leakage current less than 10 pA/mu m, and a subthreshold swing of 110 mV/decades.
- 出版日期2011-5
