Anomalous high photoconductivity in short channel indium-zinc-oxide photo-transistors

作者：Choi Hyun Sik; Jeon Sanghun^*

来源：Applied Physics Letters, 2015, 106(1): 013503.

DOI：10.1063/1.4905310

Upon light exposure, an indium-zinc-oxide (IZO) thin-film transistor (TFT) presents higher photoconductivity by several orders of magnitude at the negative gate bias region. Among various device geometrical factors, scaling down the channel length of the photo-transistor results in an anomalous increase in photoconductivity. To probe the origin of this high photoconductivity in short-channel device, we measured transient current, current-voltage, and capacitance-voltage characteristics of IZO-TFTs with various channel lengths and widths before and after illumination. Under the illumination, the equilibrium potential region which lies far from front interface exists only in short-channel devices, forming the un-depleted conducting back channel. This region plays an important role in carrier transport under the illumination, leading to high photoconductivity in short-channel devices. Photon exposure coupled with gate-modulated band bending for short-channel devices leads to the accumulation of V-o(++) at the front channel and screening negative gate bias, thereby generating high current flow in the un-depleted back-channel region.

• 出版日期2015-1-5