Nonvolatile Bipolar Resistive Memory Switching in Single Crystalline NiO Heterostructured Nanowires

作者：Oka Keisuke; Yanagida Takeshi^*; Nagashima Kazuki; Tanaka Hidekazu; Kawai Tomoji

来源：Journal of the American Chemical Society, 2009, 131(10): 3434-+.

DOI：10.1021/ja8089922

We have demonstrated the nonvolatile bipolar resistive memory switching in single crystalline NiO heterostructured nanowires for the first time. The self-assembled NiO nanowires are expected to open up opportunities to explore not only the detailed nanoscate mechanisms in NiO resistive memory switching but also next-generation nanoscate nonvolatile memory devices with the potential for high-density device integration and improved memory characteristics.

• 出版日期2009-3-18