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摘要
Alternative dielectric materials that would replace silicon dioxide for applications such as gate-dielectric transistor and integrated passive metal-insulator-metal (MIM) capacitors have to pass the stringent and complex requirements of each application. Creating alloying films using ALD and alloying at the interfaces of the mixture films allows the manufacturing of amorphous films up to 1000degreesC with minimum leakage current. From an electrical and material point of view, the alloying films are one promising candidate.
- 出版日期2004-5
