An ultra-low power CMOS temperature sensor for passive RFID application

作者：Wu, Xiang; Deng, Fangming^*; He, Yigang; Li, Bing

来源：Journal of Low Power Electronics, 2015, 11(4): 504-508.

DOI：10.1166/jolpe.2015.1409

• CMOS processs
• Low Power
• PTAT current
• RFID Technology
• Ring oscillator

This paper presents an ultra-low power CMOS Temperature Sensor for RFID Application. The proposed temperature sensor employs an inverter-based ring oscillator to generate a PTAT frequency, which is followed by a counter to achieve digital output conversion. The proposed temperature sensor is fabricated in TSMC 0.18 μm CMOS process and covers an area of 0.062 mm2. The measurement results show that this temperature sensor consumes 113 nW power at 0.5 V supply voltage. The measured resolution is 0.3 °C/LSB within the range from -40 °C to 80 °C and the error is -0.7/1.2 °C after 2-point calibration.

• 出版日期2015
• 单位合肥工业大学