Phase formation and stability of Cu-Ge films with low electrical resistivity

作者：Fang J S^*; Cai C J; Lee J H; Chin T S

来源：Thin Solid Films, 2015, 584: 228-231.

DOI：10.1016/j.tsf.2015.01.013

• Copper germanide
• Copper alloy
• Cu interconnection
• Cu3Ge
• Electrical resistivity

This study presents an evaluation of copper germanide (Cu-Ge) thin films with low resistivity and high thermal stability. The films were prepared on glass and Si substrates via magnetron co-sputtering deposition and were subsequently annealed at temperatures between 300 and 600 degrees C. The results indicated that Cu17Ge3 and Cu3Ge phases were formed in films deposited at different sputtering powers using a Cu target and a Ge target. The Cu3Ge phase had a monoclinic structure and reached a low resistivity of 12.4 mu Omega cm when the film was annealed at 600 degrees C. This low resistivity in combination with a high-oxidation resistance makes the Cu3Ge film suitable for application in Cu interconnections.

• 出版日期2015-6-1