摘要

The build-up and accumulation of stresses in Al2O3:Cr single crystalline samples under 670MeV Bi, 167MeV Xe and 107MeV Kr ion irradiation have been studied using ion-beam-induced luminescence measurements. The stress level has been deduced from R-line luminescence spectra measured in situ on the basis of the piezospectroscopic effect. The experimental data have revealed different stages in the stress accumulation processes associated with irradiation regimes before and after swift heavy ion track overlap. Large compressive stresses were found to be generated by radiation damage created via electronic excitations, which induce the splitting of the R-line emission in the basal plane of irradiated ruby crystals.

  • 出版日期2009