A novel design of memristor-based bidirectional associative memory circuits using Verilog-AMS

作者：Li, Bo; Zhao, Yonglei; Shi, Guoyong^*

来源：Neurocomputing, 2019, 330: 437-448.

DOI：10.1016/j.neucom.2018.11.050

• Memristor
• Crossbar array
• Bidirectional associative memory
• Content-addressable memory
• Verilog-AMS
• Artificial neural network

Recently, memristor as an emerging device has been used as the basic synapse realization component for the circuit implementation of artificial neural networks. Following this trend, this paper studies the circuit realization of a memristor-based bidirectional associative memory (BAM) system that extends the memristor crossbar array structure for bidirectional synaptic weighting operation. The neuron cell in BAM is represented by digital circuit element JK flip-flop for hardware cost-saving. Meanwhile a novel memristor programming strategy is also considered and examined to ease the on-chip learning. The design of such memristive BAM circuit system is conducted by hardware description language Verilog-AMS and has been validated in a commercial circuit simulation environment via a case study. Test results show that a set of binary character patterns can be memorized and recalled successfully by the trained memristive BAM system.

• 出版日期2019-2-22
• 单位上海交通大学