Atomically-Coherent-Coalescence of Two Growth-Fronts in Ge Stripes on Insulator by Rapid-Melting Lateral-Crystallization

作者：Kurosawa Masashi^*; Toko Kaoru; Sadoh Taizoh; Mizushima Ichiro; Miyao Masanobu

来源：ECS Journal of Solid State Science and Technology, 2013, 2(3): P54-P57.

DOI：10.1149/2.005303jss

High-quality Ge-on-insulator (GOI) is a key structure for integrating high-speed transistors and optical- and spintronic-devices on Si-platform. Effects of coalescence of two growth-fronts on crystallinity of GOI-stripes during rapid-melting lateral-crystallization are investigated as a function of growth-distance. For long growth-distance (%26gt;= 150 mu m), grain-boundaries are generated in coalesced regions due to tilting growth-fronts (1-3 degrees). On the other hand, for short distance (%26lt;= 5 mu m), lattice-structures coherently align without strains. Moreover, for intermediate distance (5-150 mu m), lattice-structures of growth-fronts coherently align without any defects, though heterogeneous lattice-strains are locally induced due to slightly tilting growth-fronts (similar to 0.5 degrees). Such atomically-coherent-coalescence for growth-distance %26lt;150 mu m shows significant advantage of rapid-melting-crystallization over vapor and solid-phase techniques.

• 出版日期2013